central semiconductor corp. tm process CP617 small signal transistor pnp - silicon rf transistor chip princip al device types cm4957 process epitaxial planar die size 16 x 16 mils die thickness 8.0 mils base bonding pad area 3.75 x 3.75 mils emitter bonding pad area 3.75 x 3.75 mils top side metalization al - 30,000? back side metalization au - 10,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside collector r2 (1-august 2002) gross die per 4 inch w afer 44,140
central semiconductor corp. tm process CP617 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r2 (1-august 2002)
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